CWE-1246 詳細資料

CWE-1246

Improper Write Handling in Limited-write Non-Volatile Memories
2020-02-24
00h00 +00:00
Incomplete
2026-10-28
00h00 +00:00
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掌握特定 CWE 的任何變更。
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名稱: Improper Write Handling in Limited-write Non-Volatile Memories

The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories.

一般資訊

背景詳情

引入方式

Architecture and Design
Implementation

適用平台

程式語言

類別: Not Language-Specific (Undetermined)

作業系統

類別: Not OS-Specific (Undetermined)

架構

類別: Not Architecture-Specific (Undetermined)

技術

類別: System on Chip (Undetermined)
名稱: Memory Hardware (Undetermined)
名稱: Storage Hardware (Undetermined)

常見後果

範圍 影響 可能性
AvailabilityDoS: Instability

注意:If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.

潛在緩解措施

Phases : Architecture and Design // Implementation // Testing
Include secure wear leveling algorithms and ensure they may not be bypassed.

漏洞對應備注

理由說明 : This CWE entry is at the Base level of abstraction, which is a preferred level of abstraction for mapping to the root causes of vulnerabilities.
備註 : Carefully read both the name and description to ensure that this mapping is an appropriate fit. Do not try to 'force' a mapping to a lower-level Base/Variant simply to comply with this preferred level of abstraction.

相關攻擊模式

CAPEC ID 攻擊模式名稱
CAPEC-212 Functionality Misuse
An adversary leverages a legitimate capability of an application in such a way as to achieve a negative technical impact. The system functionality is not altered or modified but used in a way that was not intended. This is often accomplished through the overuse of a specific functionality or by leveraging functionality with design flaws that enables the adversary to gain access to unauthorized, sensitive data.

參考資料

REF-1058

Enhancing Lifetime and Security of PCM-Based Main Memory with Start-Gap Wear Leveling
Moinuddin Qureshi, Michele Franchescini, Vijayalakshmi Srinivasan, Luis Lastras, Bulent Abali, John Karidis.
https://www.seas.upenn.edu/~leebcc/teachdir/ece299_fall10/Qureshi09_pcmWear.pdf

REF-1059

Bad Block Management in NAND Flash Memory
Micron.
https://e2e.ti.com/cfs-file/__key/communityserver-discussions-components-files/791/tn2959_5F00_bbm_5F00_in_5F00_nand_5F00_flash.pdf

提交

名稱 機構 日期 發布日期 Version
Arun Kanuparthi, Hareesh Khattri, Parbati Kumar Manna, Narasimha Kumar V Mangipudi Intel Corporation 2020-02-10 +00:00 2020-02-24 +00:00 4.0

修改記錄

名稱 機構 日期 備註
CWE Content Team MITRE 2020-08-20 +00:00 updated Demonstrative_Examples, Description, Potential_Mitigations, Research_Gaps
CWE Content Team MITRE 2021-07-20 +00:00 updated Related_Attack_Patterns
CWE Content Team MITRE 2022-04-28 +00:00 updated Applicable_Platforms
CWE Content Team MITRE 2022-06-28 +00:00 updated Applicable_Platforms
CWE Content Team MITRE 2022-10-13 +00:00 updated Demonstrative_Examples, Relationships, Research_Gaps
CWE Content Team MITRE 2023-04-27 +00:00 updated References, Relationships, Taxonomy_Mappings
CWE Content Team MITRE 2023-06-29 +00:00 updated Mapping_Notes
CWE Content Team MITRE 2025-04-03 +00:00 updated Demonstrative_Examples, References
CWE Content Team MITRE 2025-09-09 +00:00 updated References
CWE Content Team MITRE 2025-12-11 +00:00 updated Common_Consequences, Description, Weakness_Ordinalities
CWE Content Team MITRE 2026-10-28 +00:00 updated Background_Details, Description